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  september 2006 rev 2 1/12 12 STF24NF12 n-channel 120v - 0.070 ? - 24a to-220fp low gate charge stripfet? ii mosfet general features exceptional dv /dt capability low gate charge at 100c application oriented characterization 100% avalanche tested description this mosfet is the latest development of stmicroelectronics unique ?single feature size?? strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications switching application internal schematic diagram type v dss r ds(on) i d STF24NF12 120v <0.077 ? 24a 1 2 3 to-220fp www.st.com order codes part number marking package packaging STF24NF12 f24nf12 to-220fp tube
contents STF24NF12 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STF24NF12 electrical ratings 3/12 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 120 v v gs gate-source voltage 20 v i d (1) 1. pulse with limited by safe operating area drain current (continuous) at t c = 25c 24 a i d drain current (continuous) at t c =100c 13 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 96 a p tot total dissipation at t c = 25c 30 w derating factor 0.2 w/c dv/dt (3) 3. i sd 24a, di/dt 600a/s, v dd v (br)dss , tj t jmax peak diode recovery voltage slope 9 v/ns e as (4) 4. starting t j =25c, i d =12a, v dd =30v single pulse avalanche energy 220 mj t j t stg operating junction temperature storage temperature -55 to 175 c table 2. thermal data r thj-case thermal resistance junction-case max 5 c/w r thj-a thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STF24NF12 4/12 2 electrical characteristics (t case =25c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 120 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 12a 0.070 0.077 ? table 4. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 15v, i d = 15a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f=1 mhz, v gs =0 870 125 50 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =80v, i d = 24a v gs =10v (see figure 13) 30 6 10 72 nc nc nc table 5. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 50v, i d = 12a, r g = 4.7 ?, v gs = 10v (see figure 12) 60 45 ns ns t d(off) t f turn-off-delay time fall time v dd = 50v, i d = 12a, r g =4.7 ?, v gs =10v (see figure 12) 50 20 ns ns
STF24NF12 electrical characteristics 5/12 table 6. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current 13 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 96 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =24a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =24a, di/dt = 100a/s, v dd =30v, tj=150c (see figure 14) 100 375 7.5 ns nc a
electrical characteristics STF24NF12 6/12 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
STF24NF12 electrical characteristics 7/12 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
test circuit STF24NF12 8/12 3 test circuit figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform
STF24NF12 package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STF24NF12 10/12 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.5 0.045 0.067 f2 1.15 1.5 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
STF24NF12 revision history 11/12 5 revision history table 7. revision history date revision changes 31-may-2005 1 first issue 04-sep-2006 2 new template, no content change
STF24NF12 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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